Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2018/042835
Kind Code:
A1
Abstract:
A gate trench, which is defined by a first side surface and a first bottom surface, and a source trench, which is defined by a second side surface and a second bottom surface, are provided on a first main surface. A silicon carbide substrate includes a drift region, body region, source region, first region, and second region. The first region is in contact with the second region. On the first side surface, a gate insulating film is in contact with the drift region, the body region, and the source region, and on the first bottom surface, the gate insulating film is in contact with the drift region. On the second side surface and the second bottom surface, the source electrode is in contact with the second region.
Inventors:
UCHIDA KOSUKE (JP)
HIYOSHI TORU (JP)
SAKAI MITSUHIKO (JP)
HIYOSHI TORU (JP)
SAKAI MITSUHIKO (JP)
Application Number:
PCT/JP2017/022651
Publication Date:
March 08, 2018
Filing Date:
June 20, 2017
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/12; H01L29/417
Domestic Patent References:
| WO2016002769A1 | 2016-01-07 |
Foreign References:
| US20140021484A1 | 2014-01-23 | |||
| JP2013145770A | 2013-07-25 | |||
| JP2013219293A | 2013-10-24 | |||
| JP2014056882A | 2014-03-27 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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