Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2018/043300
Kind Code:
A1
Abstract:
According to the present invention, when the film thickness of a p-type base region (3) is measured, an infrared light is irradiated from a p-type base region (3) side to an n+-type substrate (1) on which the p-type base region (3) and n--type drift layer (2) are grown. Reflection light from an interface between the p-type base region (3) and the n--type drift layer (2) is not used, but inference light made by reflection light from the surface of the p-type base region (3) and reflection light from an interface between the n--type drift layer (2) and the n+-type substrate (1) is measured. This makes it possible to measure a bi-layered film thickness T2, which is a summed thickness of the p-type base region (3) and the n--type drift layer (2). Accordingly, the film thickness of the p-type base region (3) can be calculated by subtracting a mono-layered film thickness T1 of the n-type drift layer (2) from the bi-layered film thickness T2.
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Inventors:
AMANO AKIRA (JP)
SATOMURA TAKAYUKI (JP)
TAKEUCHI YUICHI (JP)
SUZUKI KATSUMI (JP)
AOI SACHIKO (JP)
SATOMURA TAKAYUKI (JP)
TAKEUCHI YUICHI (JP)
SUZUKI KATSUMI (JP)
AOI SACHIKO (JP)
Application Number:
PCT/JP2017/030407
Publication Date:
March 08, 2018
Filing Date:
August 24, 2017
Export Citation:
Assignee:
DENSO CORP (JP)
TOYOTA MOTOR CO LTD (JP)
TOYOTA MOTOR CO LTD (JP)
International Classes:
H01L21/336; G01B11/06; H01L21/66; H01L29/12; H01L29/78
Foreign References:
JP2015072999A | 2015-04-16 | |||
JPH10223715A | 1998-08-21 | |||
JP2003065724A | 2003-03-05 | |||
JP2009302133A | 2009-12-24 | |||
JP2014236189A | 2014-12-15 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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