SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2021/005903

A1

Provided is a silicon carbide semiconductor device (60) comprising: an active region (51); and a terminal structure (52) arranged outside the active region (51). The silicon carbide semiconductor device (60) comprises: a second conductive-type semiconductor substrate (1); a second conductive-type first semiconductor layer (2); a first conductive-type second semiconductor layer (4); a second conductive-type first semiconductor region (6); a first conductive-type second semiconductor layer (7); a gate insulating film (9); a gate electrode (10); a first electrode (11); and a second electrode (12). The second semiconductor layer (4) in the terminal structure (52) has an end part (T). Out of electron density and hole density of the end part (T) when being energized, the lesser density is 1×1015/cm3 or less.

TAWARA TAKESHI (JP)
MIZUSHIMA TOMONORI (JP)
MATSUNAGA SHINICHIRO (JP)
TAKENAKA KENSUKE (JP)
TAKEI MANABU (JP)
TSUCHIDA HIDEKAZU (JP)
MURATA KOUICHI (JP)
KOYAMA AKIHIRO (JP)
NAKAYAMA KOJI (JP)
SOMETANI MITSURU (JP)
YONEZAWA YOSHIYUKI (JP)
KIUCHI YUJI (JP)

PCT/JP2020/020808

January 14, 2021

May 26, 2020

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FUJI ELECTRIC CO LTD (JP)
CENTRAL RES INST ELECTRIC POWER IND (JP)
MITSUBISHI ELECTRIC CORP (JP)

H01L29/78; H01L21/329; H01L21/336; H01L29/06; H01L29/12; H01L29/739; H01L29/74; H01L29/861; H01L29/868

WO2010131573A1	2010-11-18
WO2014030457A1	2014-02-27

JP2018125490A	2018-08-09
JP2014229794A	2014-12-08
JP2009004547A	2009-01-08
JP2018137483A	2018-08-30

SAKAI, Akinori (JP)

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