Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2015/037335
Kind Code:
A1
Abstract:
Provided is a silicon carbide semiconductor device that is capable of achieving a high current amplification factor by means of a simple configuration. A silicon carbide layer (10) includes collector regions (11, 12), a base region (13), and an emitter region (14). Trenches (TR) that have side walls (SWa, SWb) that pass through the emitter region (14) and extend from a first main surface (10a) to the base region (13) are provided to the silicon carbide layer (10). The side wall surfaces (SWa, SWb) include a region (SW1) that is macroscopically angled at 50-70 degrees with regard to a (000-1) surface. A production method includes a step for forming the trenches (TR). The step for forming the trenches (TR) includes a step for chemically processing the first main surface (10a) of the silicon carbide layer (10) in order to form the abovementioned region.
Inventors:
HIYOSHI TORU (JP)
MASUDA TAKEYOSHI (JP)
MASUDA TAKEYOSHI (JP)
Application Number:
PCT/JP2014/069515
Publication Date:
March 19, 2015
Filing Date:
July 24, 2014
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/331; H01L21/302; H01L29/161; H01L29/73
Foreign References:
| JP2006303469A | 2006-11-02 | |||
| JP2012209422A | 2012-10-25 | |||
| JP2013162118A | 2013-08-19 | |||
| JP2011233669A | 2011-11-17 | |||
| JP2006351621A | 2006-12-28 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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