SILICON CARBIDE SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD THEREFOR

WIPO Patent Application WO/2018/008527

A1

All of the intervals between adjacent p-type guard rings (21) are made to be equal to or smaller than the interval between p-type deep layers (5). As a result, the intervals between the p-type guard rings (21) become larger, i.e. trenches (21a) become less dense, and thus a p-type layer (50) can be inhibited from being formed thick in a guard ring section when grown epitaxially. Accordingly, if the p-type layer (50) in a cell section is to be removed during etching back, the p-type layer (50) can be removed without leaving residue in the guard ring section. Therefore, when the p-type layer (50) is etched back and the p-type deep layers (5), the p-type guard rings (21), and p-type connecting layers (30) are formed, residue of the p-type layer (50) can be inhibited from being left in the guard ring section.

TAKEUCHI YUICHI (JP)
SUZUKI KATSUMI (JP)
WATANABE YUKIHIKO (JP)

PCT/JP2017/023988

January 11, 2018

June 29, 2017

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DENSO CORP (JP)
TOYOTA MOTOR CO LTD (JP)

H01L29/06; H01L29/12; H01L29/47; H01L29/78; H01L29/861; H01L29/868; H01L29/872

WO2013021636A1	2013-02-14
WO2013187019A1	2013-12-19

JP2008010506A	2008-01-17
JP2012204506A	2012-10-22

YOU-I PATENT FIRM (JP)

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