Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD THEREFOR
Document Type and Number:
WIPO Patent Application WO/2018/008528
Kind Code:
A1
Abstract:
The intervals in portions of a frame-like part (32) and a p-type guard ring (21) at the side of a cell section are narrowed in comparison to other portions, and the portions in which the intervals are narrowed are formed as dot line portions (211, 322). As a result of narrowing the intervals in the portions of the frame-like part (32) and the p-type guard ring (21) at the side of the cell section, the electric field concentration at the side of the cell section is attenuated, and equipotential lines are directed further towards the outer circumferential side. Furthermore, as a result of providing the dot line portions (211, 322), the differences between the formation areas of trenches per unit area in the cell section, connecting sections, and guard ring sections are reduced, and the thickness of a p-type layer formed on the cell section, the connecting sections, and the guard ring sections is made uniform. Therefore, when the p-type layer is etched back, the p-type layer can be inhibited from leaving residue in the guard ring sections.
Inventors:
TAKEUCHI YUICHI (JP)
SUZUKI KATSUMI (JP)
WATANABE YUKIHIKO (JP)
SUZUKI KATSUMI (JP)
WATANABE YUKIHIKO (JP)
Application Number:
PCT/JP2017/023989
Publication Date:
January 11, 2018
Filing Date:
June 29, 2017
Export Citation:
Assignee:
DENSO CORP (JP)
TOYOTA MOTOR CO LTD (JP)
TOYOTA MOTOR CO LTD (JP)
International Classes:
H01L29/06; H01L29/12; H01L29/47; H01L29/78; H01L29/861; H01L29/868; H01L29/872
Domestic Patent References:
| WO2013187019A1 | 2013-12-19 | |||
| WO2014208201A1 | 2014-12-31 |
Foreign References:
| JP2005286042A | 2005-10-13 | |||
| JP2003078138A | 2003-03-14 | |||
| JP2007227620A | 2007-09-06 |
Attorney, Agent or Firm:
YOU-I PATENT FIRM (JP)
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