Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE AND SILICON CARBIDE SEMICONDUCTOR DEVICE PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2019/049572
Kind Code:
A1
Abstract:
This silicon carbide semiconductor device comprises: a first electroconductive type first semiconductor layer (2) provided on the outer surface of a first electroconductive type semiconductor substrate (1); a second electroconductive type second semiconductor layer (3); a first electroconductive type first semiconductor region (7); and striped gate electrodes (10) provided through a gate insulation film (9). In addition, this silicon carbide semiconductor device comprises a first electrode (13) provided on the surfaces of the second semiconductor layer (3) and the first semiconductor region (7), a plating film (16) selectively provided above the first electrode (13), and solder (17) that anchors a pin-shaped electrode (19) for extracting an external signal to the plating film (16). In a region facing the first electrode (13) where the solder (17) and the plating film (16) are provided, the gate electrodes (10) have a protruding portion extending in a direction that intersects the stripes, and the gate electrodes (10) are connected to one another.
Inventors:
KUMADA KEISHIROU (JP)
HASHIZUME YUICHI (JP)
HOSHI YASUYUKI (JP)
SUZUKI YOSHIHISA (JP)
HASHIZUME YUICHI (JP)
HOSHI YASUYUKI (JP)
SUZUKI YOSHIHISA (JP)
Application Number:
PCT/JP2018/029195
Publication Date:
March 14, 2019
Filing Date:
August 03, 2018
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/78; H01L21/3205; H01L21/60; H01L21/768; H01L23/522; H01L29/12
Domestic Patent References:
| WO2015040712A1 | 2015-03-26 |
Foreign References:
| JP2009152364A | 2009-07-09 | |||
| JP2015204375A | 2015-11-16 | |||
| JP2008235547A | 2008-10-02 | |||
| JP2003318396A | 2003-11-07 | |||
| JP2010147219A | 2010-07-01 | |||
| JP2017079324A | 2017-04-27 |
Attorney, Agent or Firm:
SAKAI, Akinori (JP)
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