Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2014/112214
Kind Code:
A1
Abstract:
First and second ranges (RA, RB) of a silicon carbide film (90) are provided with an interface (IF). The first range (RA) includes: a first withstand-voltage maintaining layer (81A) having a first conductivity type; and outer-edge embedded regions (TB) which are provided at the interface (IF) in an outer-edge portion (PT), and which have a second conductivity type. The second range (RB) includes a second withstand-voltage maintaining layer (81B) having the first conductivity type. Semiconductor elements (EL) are formed in the second range (RB). The first range (RA) is provided with: central sections (CC) which face, in the width direction, the semiconductor elements (EL) in a central portion (PC); and an outer-edge section (CT) which faces, in the width direction, the semiconductor element (EL) in the outer-edge portion (PT). Upon the interface (IF), the outer-edge section (CT) includes a part having an impurity concentration different to the impurity concentration of the central sections (CC).
More Like This:
Inventors:
MASUDA TAKEYOSHI (JP)
WADA KEIJI (JP)
WADA KEIJI (JP)
Application Number:
PCT/JP2013/081865
Publication Date:
July 24, 2014
Filing Date:
November 27, 2013
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/336; H01L29/78; H01L29/06; H01L29/12
Foreign References:
| JPH09191109A | 1997-07-22 | |||
| JP2008004643A | 2008-01-10 | |||
| JP2002033479A | 2002-01-31 | |||
| JP2000183350A | 2000-06-30 | |||
| JPH11330496A | 1999-11-30 | |||
| JP2008016461A | 2008-01-24 | |||
| JPH09191109A | 1997-07-22 |
Other References:
See also references of EP 2947694A4
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
Download PDF: