SILICON CARBIDE SEMICONDUCTOR DEVICE - PANASONIC IP MAN CO LTD

Title:

SILICON CARBIDE SEMICONDUCTOR DEVICE

Document Type and Number:

WIPO Patent Application WO/2015/178024

Kind Code:

A1

Abstract:

This silicon carbide semiconductor device comprises a transistor region, a diode region, a gate wiring region and a gate pad region. The gate pad region and the gate wiring region are respectively arranged so as to be sandwiched between the diode region that is adjacent to the transistor region and the diode region that is adjacent to a termination region. A gate electrode in the gate pad region and the gate wiring region is formed on an insulating film that is formed on an epitaxial layer. Consequently, dielectric breakdown of the insulating film in the gate region can be suppressed at the time of switching or avalanche breakdown without decreasing the quality of the gate insulating film.

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Inventors:

HORIKAWA NOBUYUKI
KUSUMOTO OSAMU
HAYASHI MASASHI
UCHIDA MASAO

Application Number:

PCT/JP2015/002551

Publication Date:

November 26, 2015

Filing Date:

May 21, 2015

Export Citation:

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Assignee:

PANASONIC IP MAN CO LTD (JP)

International Classes:

H01L29/78; H01L21/336; H01L27/04; H01L29/06; H01L29/12; H01L29/861; H01L29/868

Foreign References:

JP2014082521A	2014-05-08
JP2006140372A	2006-06-01