Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2016/204035
Kind Code:
A1
Abstract:
A silicon carbide semiconductor device that has a silicon carbide substrate and a gate-insulating film. The silicon carbide substrate includes a first impurities region, a second impurities region, a third impurities region, and an electric-field-attenuation region. A first main surface of the silicon carbide substrate has formed therein trenches that are defined by side sections and a bottom section. The gate-insulating film contacts the first impurities region at the bottom sections and contacts the first impurities region, the second impurities region, and the third impurities region at the side sections. The width of a third main surface of the electric-field-attenuation region in a direction that is parallel to a second main surface is greater than the width of a fourth main surface of the electric-field-attenuating region.
Inventors:
SAITOH YU (JP)
TSUNO TAKASHI (JP)
WADA KEIJI (JP)
HIYOSHI TORU (JP)
TSUNO TAKASHI (JP)
WADA KEIJI (JP)
HIYOSHI TORU (JP)
Application Number:
PCT/JP2016/067022
Publication Date:
December 22, 2016
Filing Date:
June 08, 2016
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/78; H01L21/336; H01L29/06; H01L29/12
Foreign References:
| JP2014041990A | 2014-03-06 | |||
| JP2009141243A | 2009-06-25 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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