Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/008884
Kind Code:
A1
Abstract:
In this invention, a first silicon carbide layer has a first drift region, a first impurity region, and a second impurity region. A second silicon carbide layer has a second drift region, a third impurity region, and a fourth impurity region. A silicon carbide substrate has either a first structure or a second structure. In the first structure, the first impurity region is in contact with the second impurity region, the third impurity region is separated from the fourth impurity region by the second drift region, and the width of the second impurity region is larger than the width of the fourth impurity region in a direction that is parallel to a first main surface. In the second structure, the first impurity region is separated from the second impurity region by the first drift region, the third impurity region is in contact with the fourth impurity region, and the width of the fourth impurity region is larger than the width of the second impurity region in the direction parallel to the first main surface.
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Inventors:
HIYOSHI TORU (JP)
UCHIDA KOSUKE (JP)
UCHIDA KOSUKE (JP)
Application Number:
PCT/JP2018/016950
Publication Date:
January 10, 2019
Filing Date:
April 26, 2018
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L29/06; H01L29/12; H01L29/78
Foreign References:
| JP2008016461A | 2008-01-24 | |||
| JP2014175518A | 2014-09-22 | |||
| JP2001523895A | 2001-11-27 | |||
| JPH10173174A | 1998-06-26 | |||
| US6426520B1 | 2002-07-30 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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