Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2020/184304
Kind Code:
A1
Abstract:
A silicon carbide semiconductor device according to the present invention has: a metal plate having a first principal surface and a second principal surface at the reverse side from the first principal surface; an insulating film provided at a portion of the first principal surface of the metal plate; a first conductive layer provided on the insulating film; and a silicon carbide semiconductor chip that has a first electrode and a second electrode on a first surface and that has a third electrode on a second surface at the reverse side from the first surface. The first surface of the silicon carbide semiconductor chip and the first principal surface of the metal plate are opposed to each other, the first electrode and the first conductive layer are bonded with a first bonding material, and the second electrode and the first principal surface of the metal plate are bonded with a second bonding material.
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Inventors:
MICHIKOSHI HISATO (JP)
Application Number:
PCT/JP2020/008952
Publication Date:
September 17, 2020
Filing Date:
March 03, 2020
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L23/34; H01L23/48; H01L29/12; H01L29/78
Domestic Patent References:
| WO2013061392A1 | 2013-05-02 |
Foreign References:
| JP2013089948A | 2013-05-13 | |||
| JP2006179735A | 2006-07-06 | |||
| JP2017034161A | 2017-02-09 |
Attorney, Agent or Firm:
ITOH, Tadashige et al. (JP)
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