Title:
SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/038681
Kind Code:
A1
Abstract:
According to the present invention, a front surface side of a semiconductor substrate (30) is provided with a source trench structure that comprises a gate trench (7), in which a gate electrode (9) is buried, and a source trench (11), in which a source electrode (13) is buried. A p-type base region (3) extends along the inner wall of the source trench (11) between the source trench (11) and an n- type drift region (2); and the bottom surface of the source trench (11) is surrounded by the p-type base region (3). An n-type current diffusion region (16) is provided so as to face the lower surface of a p-type base deep portion (4) of the p-type base region (3) in the depth direction (Z), the p-type base deep portion (4) extending along the bottom surface of the source trench (11). The n-type current diffusion region (16) has a function of lowering the breakdown voltage by making avalanche breakdown likely to occur in the vicinity of the bottom surface of the source trench (11) when an SiC-MOSFET is in an off state. Consequently, the present invention is capable of reducing the on-resistance.
Inventors:
OKUMURA KEIJI (JP)
Application Number:
PCT/JP2023/023686
Publication Date:
February 22, 2024
Filing Date:
June 26, 2023
Export Citation:
Assignee:
FUJI ELECTRIC CO LTD (JP)
International Classes:
H01L29/78; H01L29/06; H01L29/12
Foreign References:
| JP2012178536A | 2012-09-13 | |||
| JP2019161199A | 2019-09-19 | |||
| JP2021044518A | 2021-03-18 |
Attorney, Agent or Firm:
SAKAI, Akinori (JP)
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