Title:
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2014/054228
Kind Code:
A1
Abstract:
This silicon carbide semiconductor substrate is configured from a silicon carbide single crystal, and has, as an identifying indicator, a mark (2) formed at least on the surface thereof, said mark being configured from a crystal defect. When a silicon carbide single crystal (3) is grown using the silicon carbide semiconductor substrate as a seed crystal, the mark (2) can be propagated in the silicon carbide single crystal (3) as the crystal defect. When silicon carbide semiconductor substrates (4) are manufactured using the silicon carbide single crystal (3), each of the silicon carbide semiconductor substrates (4) can be in a state with the mark (2) having been already formed.
Inventors:
YAMAUCHI SHOUICHI (JP)
HIRANO NAOHIKO (JP)
HIRANO NAOHIKO (JP)
Application Number:
PCT/JP2013/005415
Publication Date:
April 10, 2014
Filing Date:
September 12, 2013
Export Citation:
Assignee:
DENSO CORP (JP)
International Classes:
H01L21/02
Foreign References:
| JPH10120497A | 1998-05-12 | |||
| JPS5575221A | 1980-06-06 |
Attorney, Agent or Firm:
KIN, Junhi (JP)
Gold Junki (JP)
Gold Junki (JP)
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