SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, PRODUCTION METHOD FOR SILICON CARBIDE SEMICONDUCTOR SUBSTRATE, SEMICONDUCTOR DEVICE, AND PRODUCTION METHOD FOR SEMICONDUCTOR DEVICE

WIPO Patent Application WO/2018/021575

A1

This silicon carbide semiconductor substrate includes: a silicon carbide substrate (1) of a first conductor type, which comprises a central part and an outer peripheral part covering an area of a prescribed width w from the edge; a buffer layer (2) of the first conductor type, which is provided on the obverse surface of the central part of the silicon carbide substrate (1), and which is added with a second impurity different from a first impurity that determines the conductor type of the silicon carbide substrate (1) and that is included at a concentration of not less than 1.0×1018/cm3; and an epitaxial layer (4) of the first conductor type, which is disposed on the obverse surface of the outer peripheral part of the silicon carbide substrate (1), and in which the concentration of the first impurity is lower than that in the buffer layer (2). According to this configuration, even when a buffer layer having an impurity concentration equal to or higher than a substrate is formed on the substrate, it is possible to prevent a lifetime killer from spreading in an element manufacturing process and also to prevent a stacking failure to occur at the edge of the substrate.

TAWARA TAKESHI (JP)
TSUCHIDA HIDEKAZU (JP)
MIYAZAWA TETSUYA (JP)

PCT/JP2017/027579

February 01, 2018

July 28, 2017

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FUJI ELECTRIC CO LTD (JP)

H01L29/12; C30B29/36; C30B33/04; H01L21/336; H01L29/78

WO2010131570A1	2010-11-18
WO2008120469A1	2008-10-09

JP2012195562A	2012-10-11
JP2014231457A	2014-12-11
JPH0521358A	1993-01-29
JP2012256628A	2012-12-27
JP2001502474A	2001-02-20

SAKAI, Akinori (JP)

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