Title:
SILICON CARBIDE SINGLE CRYSTAL PRODUCTION METHOD, AND SILICON CARBIDE SINGLE CRYSTAL PRODUCTION DEVICE
Document Type and Number:
WIPO Patent Application WO/2015/072462
Kind Code:
A1
Abstract:
A SiC single crystal is grown from a first seed crystal (50a) formed from silicon carbide, and the SiC single crystal is cut to form a base section (51c), a tip section (51a) and a middle section (51b); the middle section (51b) is removed, the base section (51c) and tip section (51a) are joined as a second seed crystal (50b), and from the growth face (52) thereof, a SiC single crystal is grown.
Inventors:
KAMATA ISAHO (JP)
TSUCHIDA HIDEKAZU (JP)
HOSHINO NORIHIRO (JP)
KOJIMA JUN (JP)
TSUCHIDA HIDEKAZU (JP)
HOSHINO NORIHIRO (JP)
KOJIMA JUN (JP)
Application Number:
PCT/JP2014/079875
Publication Date:
May 21, 2015
Filing Date:
November 11, 2014
Export Citation:
Assignee:
CENTRAL RES INST ELECT (JP)
DENSO CORP (JP)
DENSO CORP (JP)
International Classes:
C30B29/36
Foreign References:
| JP2008290895A | 2008-12-04 | |||
| JP2009084071A | 2009-04-23 | |||
| JP2006016294A | 2006-01-19 |
Attorney, Agent or Firm:
KURIHARA, Hiroyuki et al. (JP)
Hiroyuki Kurihara (JP)
Hiroyuki Kurihara (JP)
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