Title:
SILICON CARBIDE SINGLE-CRYSTAL WAFER AND PROCESS FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO/2006/115148
Kind Code:
A1
Abstract:
A silicon carbide single-crystal wafer characterized in that epitaxial growth has been carried out on a substrate cut out in an off-direction deviated by less than 10 degrees from <11-20> direction at an off-angle of less than 2 degrees from (0001)c plane of &agr -silicon carbide single-crystal, and that the number of approximately triangular stacking faults exposed on the wafer surface is less than 4 faults/cm2 over the entire wafer surface. There is provided a process for producing a silicon carbide single-crystal wafer in which there can be attained not only enhancement of utilization ratio of bulk silicon carbide single-crystal and enhancement of device characteristics thereof but also enhancement of cleavage properties, and provided a silicon carbide single-crystal wafer obtained by the production process.
Inventors:
MARUYAMA TAKAYUKI
Application Number:
PCT/JP2006/308229
Publication Date:
November 02, 2006
Filing Date:
April 19, 2006
Export Citation:
Assignee:
BRIDGESTONE CORP (JP)
MARUYAMA TAKAYUKI
MARUYAMA TAKAYUKI
International Classes:
H01L21/205; C23C16/42; C30B29/20; C30B29/36
Foreign References:
| JP2003282451A | 2003-10-03 | |||
| JP2003095798A | 2003-04-03 | |||
| JP2003342099A | 2003-12-03 |
Other References:
See also references of EP 1895573A4
Attorney, Agent or Firm:
Miyoshi, Hidekazu (2-8 Toranomon 1-chome, Minato-k, Tokyo 01, JP)
Download PDF: