Title:
SILICON CARBIDE SUBSTRATE, SILICON CARBIDE EPITAXIAL SUBSTRATE, AND METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2024/057845
Kind Code:
A1
Abstract:
This silicon carbide substrate has a first main surface, a second main surface, and a basal surface dislocation. The second main surface is positioned on the opposite side from the first main surface. The basal surface dislocation has a linear dislocation that extends linearly, and has a length of at least 1 mm when viewed in a direction perpendicular to the first main surface. When the length of the long sides of a first region and a second region is 16.7 mm, and the length of the short sides of the first region and the second region is 6.3 mm, the number of linear dislocations does not exceed 30 in any rectangular region positioned between the first region and the second region and parallel to the first main surface, the first region being a rectangular region that is separated by 15 µm from the first main surface toward the second main surface and faces the first main surface, and the second region being a rectangular region that is separated by 15 µm from the second main surface toward the first main surface and faces the first region.
Inventors:
OKITA KYOKO (JP)
Application Number:
PCT/JP2023/030246
Publication Date:
March 21, 2024
Filing Date:
August 23, 2023
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
H01L21/20; C30B23/02; C30B29/36; C30B33/00; H01L21/336; H01L29/12; H01L29/78
Domestic Patent References:
| WO2020095872A1 | 2020-05-14 | |||
| WO2018131449A1 | 2018-07-19 |
Foreign References:
| JP2016166112A | 2016-09-15 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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