Title:
SILICON CARBIDE SUBSTRATE AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2012/172955
Kind Code:
A1
Abstract:
A first single crystal board (11) has a first side surface (S1), and is composed of a silicon carbide. A second single crystal board (12) has a second side surface (S2) facing the first side surface (S1), and is composed of the silicon carbide. Between the first and the second side surfaces (S1, S2), a connecting portion (BDa) connects the first and the second side surfaces (S1, S2) to each other. At least a part of the connecting portion (BDa) is formed of particles, which are composed of a silicon carbide, and have a maximum length of 1 μm or less.
Inventors:
HORI TSUTOMU (JP)
HARADA SHIN (JP)
ISHIBASHI KEIJI (JP)
FUJIWARA SHINSUKE (JP)
HARADA SHIN (JP)
ISHIBASHI KEIJI (JP)
FUJIWARA SHINSUKE (JP)
Application Number:
PCT/JP2012/063477
Publication Date:
December 20, 2012
Filing Date:
May 25, 2012
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
HORI TSUTOMU (JP)
HARADA SHIN (JP)
ISHIBASHI KEIJI (JP)
FUJIWARA SHINSUKE (JP)
HORI TSUTOMU (JP)
HARADA SHIN (JP)
ISHIBASHI KEIJI (JP)
FUJIWARA SHINSUKE (JP)
International Classes:
C30B33/06; C30B29/36; H01L29/12; H01L29/78
Domestic Patent References:
| WO2011052321A1 | 2011-05-05 | |||
| WO2011052320A1 | 2011-05-05 | |||
| WO2010131569A1 | 2010-11-18 |
Foreign References:
| JP2000044398A | 2000-02-15 | |||
| JP2000034200A | 2000-02-02 |
Attorney, Agent or Firm:
Fukami Patent Office, p. c. (JP)
Patent business corporation Fukami patent firm (JP)
Patent business corporation Fukami patent firm (JP)
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Claims: