Title:
SILICON CARBIDE SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE SUBSTRATE, AND APPARATUS FOR MANUFACTURING SILICON CARBIDE SUBSTRATE
Document Type and Number:
WIPO Patent Application WO/2023/157514
Kind Code:
A1
Abstract:
This silicon carbide substrate is a vanadium-doped silicon carbide substrate having a main surface. The main surface is composed of an outer edge, an outer peripheral region which is a region within 5 mm from the outer edge, and a central region surrounded by the outer peripheral region. When the central region is divided into multiple square regions with a side length of 5 mm each, the electrical resistivity in each of the multiple square regions is at least 1×1011 Ωcm. The surface density of micro-pipes in the central region is at most 1 pipe per cm2.
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Inventors:
UETA SHUNSAKU (JP)
Application Number:
PCT/JP2023/000641
Publication Date:
August 24, 2023
Filing Date:
January 12, 2023
Export Citation:
Assignee:
SUMITOMO ELECTRIC INDUSTRIES (JP)
International Classes:
C30B29/36
Foreign References:
| JP2010150133A | 2010-07-08 | |||
| JP2012521948A | 2012-09-20 | |||
| JP2015517451A | 2015-06-22 | |||
| JP2015514673A | 2015-05-21 | |||
| JP2016507467A | 2016-03-10 |
Attorney, Agent or Firm:
FUKAMI PATENT OFFICE, P.C. (JP)
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