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Title:
SILICON CARBIDE SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SAID SILICON CARBIDE SUBSTRATE AND SEMICONDUCTOR DEVICE
Document Type and Number:
WIPO Patent Application WO/2012/014645
Kind Code:
A1
Abstract:
The disclosed silicon carbide substrate (1) comprises silicon carbide, and the angle between the orthographic projections of the normal of one principal surface (1A) and the normal of the {03-38} plane, to a plane containing the <01-10> direction and the <0001> direction, is 0.5° or less. As a result, said silicon carbide substrate (1) exhibits both improved semiconductor-device channel mobility and property stability.

Inventors:
SASAKI, Makoto (1-1, Koyakita 1-chome, Itami-sh, Hyogo 16, 〒6640016, JP)
佐々木 信 (〒16 兵庫県伊丹市昆陽北一丁目1番1号 住友電気工業株式会社 伊丹製作所内 Hyogo, 〒6640016, JP)
HARADA, Shin (1-3, Shimaya 1-chome, Konohana-ku, Osaka-sh, Osaka 24, 〒5540024, JP)
原田 真 (〒24 大阪府大阪市此花区島屋一丁目1番3号 住友電気工業株式会社 大阪製作所内 Osaka, 〒5540024, JP)
Application Number:
JP2011/065470
Publication Date:
February 02, 2012
Filing Date:
July 06, 2011
Export Citation:
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Assignee:
SUMITOMO ELECTRIC INDUSTRIES, LTD. (5-33, Kitahama 4-chome Chuo-ku, Osaka-sh, Osaka 41, 〒5410041, JP)
住友電気工業株式会社 (〒41 大阪府大阪市中央区北浜四丁目5番33号 Osaka, 〒5410041, JP)
SASAKI, Makoto (1-1, Koyakita 1-chome, Itami-sh, Hyogo 16, 〒6640016, JP)
佐々木 信 (〒16 兵庫県伊丹市昆陽北一丁目1番1号 住友電気工業株式会社 伊丹製作所内 Hyogo, 〒6640016, JP)
HARADA, Shin (1-3, Shimaya 1-chome, Konohana-ku, Osaka-sh, Osaka 24, 〒5540024, JP)
International Classes:
H01L29/12; H01L21/336; H01L29/16; H01L29/78
Attorney, Agent or Firm:
Fukami Patent Office, p.c. (Nakanoshima Central Tower, 2-7 Nakanoshima 2-chome, Kita-ku, Osaka-sh, Osaka 05, 〒5300005, JP)
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Claims: