SILICON CONCENTRATION OR ETCH SELECTIVITY MEASUREMENT METHOD AND MEASUREMENT DEVICE

WIPO Patent Application WO/2016/104433

A1

Provided are a silicon concentration measurement method and measurement device capable of continuous inline measurement of a silicon concentration within an etching solution. Further, a sensor head for silicon concentration measurement is provided that is used in the measurement method and is not easily influenced by the fixation state of a crystal oscillator or the temperature difference between the sensor head and etching solution. Provided are an etch selectivity measurement method and measurement device capable of accurate, practical, continuous inline measurement of the etching speed ratio between a silicon nitride film and silicon oxide film. The silicon concentration measurement device is provided with a crystal oscillator 11 that is covered in a silicon oxide film and is made to come into contact with the etching solution 25 of a substrate processing device 26, a vibration frequency detection means 21 for vibrating the crystal oscillator 11 while detecting the vibration frequency of the same, and a calculation means 24 for calculating the silicon concentration within the etching solution 25 on the basis of the rate of change of the vibration frequency.

OHNE NAOKI (JP)
KARIYAMA NAOMI (JP)
HIGASHI NOBORU (JP)

PCT/JP2015/085688

June 30, 2016

December 21, 2015

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KURASHIKI BOSEKI KK (JP)

G01N5/04; H01L21/306

JPH1092789A	1998-04-10
JP2002500828A	2002-01-08
JP2013041923A	2013-02-28
JP2011203252A	2011-10-13
JP2003297798A	2003-10-17
JP2011064599A	2011-03-31

UNIUS PATENT ATTORNEYS OFFICE (JP)
Patent business corporation ユニアス international patent firm (JP)

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