Title:
SILICON DRIFT RADIATION DETECTION ELEMENT, SILICON DRIFT DETECTOR, AND RADIATION DETECTION DEVICE
Document Type and Number:
WIPO Patent Application WO/2019/117272
Kind Code:
A1
Abstract:
Provided are a silicon drift radiation detection element, a silicon drift detector, and a radiation detection device that have improved radiation detection efficiency and low-energy radiation detection sensitivity. The silicon drift detector (1) comprises a housing (13, 14) and a silicon drift radiation detection element (11) arranged inside the housing (13, 14). The housing (13, 14) has an unobstructed opening (131). The silicon drift radiation detection element (11) has a surface (111) facing the opening (131) and a light-blocking film (161) provided upon the surface (111).
Inventors:
MATSUNAGA DAISUKE (JP)
AOYAMA JUNICHI (JP)
OKUBO YUJI (JP)
IKAWA SEIJI (JP)
AOYAMA JUNICHI (JP)
OKUBO YUJI (JP)
IKAWA SEIJI (JP)
Application Number:
PCT/JP2018/046005
Publication Date:
June 20, 2019
Filing Date:
December 14, 2018
Export Citation:
Assignee:
HORIBA LTD (JP)
International Classes:
G01T1/24; G01N23/223
Domestic Patent References:
| WO2006053938A1 | 2006-05-26 | |||
| WO2017187971A1 | 2017-11-02 | |||
| WO2016091993A1 | 2016-06-16 |
Foreign References:
| JP2014021000A | 2014-02-03 | |||
| JP2014235167A | 2014-12-15 | |||
| JP2014002155A | 2014-01-09 | |||
| JP2014240770A | 2014-12-25 | |||
| JP2016024085A | 2016-02-08 | |||
| JP2015121479A | 2015-07-02 |
Attorney, Agent or Firm:
KOHNO, Hideto et al. (JP)
Download PDF: