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Title:
SILICON INGOT, SILICON BLOCK, SILICON SUBSTRATE, AND SOLAR CELL
Document Type and Number:
WIPO Patent Application WO/2021/020510
Kind Code:
A1
Abstract:
An ingot according to the present invention has: a first surface; a second surface located on the opposite side from the first surface; and a third surface that is located along a first direction extending from the second surface towards the first surface in a state in which the first surface and the second surface are connected. The ingot is provided with a first pseudo monocrystal region, a first intermediate region containing at least one pseudo monocrystal region, and a second pseudo monocrystal region that are adjacent to one another in that order in a second direction orthogonal to the first direction. In the second direction, the width of the first pseudo monocrystal region and the width of the second pseudo monocrystal region are each larger than the width of the first intermediate region. A first boundary between the first pseudo monocrystal region and the first intermediate region has a coincidence boundary. A second boundary between the second pseudo monocrystal region and the first intermediate region has a coincidence boundary. At least one of the first boundary and the second boundary is curved on a virtual cross section orthogonal to the first direction.

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Inventors:
OGASHIWA YOUHEI (JP)
OGURI SEIJI (JP)
TAKENOSHITA TAKESHI (JP)
Application Number:
PCT/JP2020/029233
Publication Date:
February 04, 2021
Filing Date:
July 30, 2020
Export Citation:
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Assignee:
KYOCERA CORP (JP)
International Classes:
C30B29/06; C30B11/14; H01L31/068
Domestic Patent References:
WO2007004631A12007-01-11
Foreign References:
JP2013087051A2013-05-13
JP2015518809A2015-07-06
US20160122897A12016-05-05
JP5486190B22014-05-07
Other References:
KUTSUKAKE KENTARO ET AL.: "Fundamental study of sub-grain boundaries in si multicrystals for solar cells", JOURNAL OF THE JAPANESE ASSOCIATION FOR CRYSTALS GROWTH, vol. 36, no. 4, 2009, XP055789736
DONGLI HUSHUAI YUANLIANG HEHONGRONG CHENYUEPENG WANXUEGONG YUDEREN YANG: "Higher Quality Mono-like Cast Silicon with Induced Grain Boundaries", SOLAR ENERGY MATERIALS AND SOLAR CELLS, vol. 140, 2015, pages 121 - 125, XP029210784, DOI: 10.1016/j.solmat.2015.03.027
See also references of EP 4006212A4
Attorney, Agent or Firm:
YOSHITAKE Hidetoshi et al. (JP)
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