Title:
SILICON-ON-INSULATOR STRUCTURES AND METHODS
Document Type and Number:
WIPO Patent Application WO2003096385
Kind Code:
A3
Abstract:
Silicon-on-insulator (SOI) structures are provided by forming a single-crystal insulator over a substrate, followed by heteroepitaxy of a semiconductor layer thereover. Atomic layer deposition (ALD) is preferably used to form an amorphous insulator, followed by solid phase epitaxy to convert the layer into a single-crystal structure. Advantageously, the crystalline insulator has a lattice structure and lattice constant closely matching that of the semiconductor formed over it, and a ternary insulating material facilitates matching properties of the layers. Strained silicon can be formed without need for a buffer layer. An amorphous SiO2 layer can optionally be grown underneath the insulator. In addition, a buffer layer can be grown, either between the substrate and the insulator or between the insulator and the semiconductor layer, to produce desired strain in the active semiconductor layer.
Inventors:
WERKHOVEN CHRIS
RAAIJMAKERS IVO
ARENA CHANTAL
RAAIJMAKERS IVO
ARENA CHANTAL
Application Number:
PCT/US2003/014314
Publication Date:
July 29, 2004
Filing Date:
May 07, 2003
Export Citation:
Assignee:
ASM INC (US)
International Classes:
H01L21/02; H01L21/20; H01L21/314; H01L21/316; H01L21/336; H01L21/762; H01L27/12; H01L29/786; (IPC1-7): H01L27/01; H01L27/12; H01L31/0392
Foreign References:
| US5478653A | 1995-12-26 | |||
| US5159413A | 1992-10-27 | |||
| US5393352A | 1995-02-28 |
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