Title:
SILICON NITRIDE CHEMICAL-MECHANICAL POLISHING SOLUTION
Document Type and Number:
WIPO Patent Application WO/2018/099111
Kind Code:
A1
Abstract:
The present invention relates to a chemical-mechanical polishing solution having high silicon nitride selectivity, comprising water and abrasive particles and further comprising a heterocyclic compound containing one or more carboxyl groups, a polyamic acid and alkanolamine compound, a pH regulator, and a fungicide. The polishing solution of the present invention can increase a silicon nitride and silicon oxide polishing rate selectivity ratio and a silicon nitride and polysilicon polishing rate selectivity ratio, and can have a significantly increased silicon nitride polishing rate and a decreased silicon nitride and polysilicon polishing rate, thus having a good market application prospect.
Inventors:
ZHOU WENTING (CN)
Application Number:
PCT/CN2017/094363
Publication Date:
June 07, 2018
Filing Date:
July 25, 2017
Export Citation:
Assignee:
ANJI MICROELECTRONICS TECH SHANGHAI CO LTD (CN)
International Classes:
C09G1/02
Foreign References:
CN103509468A | 2014-01-15 | |||
CN101054498A | 2007-10-17 | |||
JP2010087454A | 2010-04-15 | |||
US20040152309A1 | 2004-08-05 |
Attorney, Agent or Firm:
BEIJING DACHENG LAW OFFICES, LLP (CN)
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