SILICON NITRIDE FILM, PRODUCTION METHOD THEREFOR, AND PRODUCTION DEVICE THEREFOR

Title:

SILICON NITRIDE FILM, PRODUCTION METHOD THEREFOR, AND PRODUCTION DEVICE THEREFOR

Document Type and Number:

WIPO Patent Application WO/2015/079938

Kind Code:

A1

Abstract:

[Problem] To provide a method using organic silane as a raw material therefor, capable of improving film quality such as the electrical characteristics thereof, and capable of reducing the carbon atom and/or hydrogen atom content ratio relative to silicon atom and nitrogen atom content in a silicon nitride film formed by plasma CVD. [Solution] A silicon nitride film formed using plasma CVD and by plasmifying organic silane and at least one type of additive gas selected from a group comprising hydrogen and ammonia. The carbon atom content in this silicon nitride film is 0.8 when the total silicon atom content and nitrogen atom content is 1. In addition, the hydrogen atom content in this silicon nitride film is 0.9 when the total silicon atom content and nitrogen atom content is 1. As a result of this silicon nitride film, characteristics such as leak current reduction are improved thereby improving the reliability of a variety of devices comprising this silicon nitride film.

Inventors:

MURAKAMI SHOICHI (JP)
HATASHITA MASAYASU (JP)
TAKA HIROSHI (JP)
YAMAWAKI MASAYA (JP)

Application Number:

PCT/JP2014/080300

Publication Date:

June 04, 2015

Filing Date:

November 17, 2014

Export Citation:

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Assignee:

SPP TECHNOLOGIES CO LTD (JP)
TAIYO NIPPON SANSO CORP (JP)

International Classes:

H01L21/318; C23C16/42; H01L21/31

Foreign References:

JPH07106256A	1995-04-21
JPH0459971A	1992-02-26
JP2004356595A	2004-12-16
JPH06132284A	1994-05-13
JP2011089186A	2011-05-06

Other References: