SILICON NITRIDE FILMS WITH HIGH NITROGEN CONTENT

Title:

SILICON NITRIDE FILMS WITH HIGH NITROGEN CONTENT

Document Type and Number:

WIPO Patent Application WO/2019/010279

Kind Code:

A3

Abstract:

Methods for depositing silicon nitride films with higher nitrogen content are described. Certain methods comprise exposing a substrate to a silicon-nitrogen precursor and an ammonia plasma to form a flowable polymer, and then curing the polymer to form a silicon nitride film. Certain methods cure the flowable polymer without the use of a UV-cure process. Also described is the film generated by the methods described above.

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Inventors:

BASU ATASHI (US)
NEMANI SRINIVAS D (US)
YIEH ELLIE Y (US)

Application Number:

PCT/US2018/040879

Publication Date:

April 11, 2019

Filing Date:

July 05, 2018

Export Citation:

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Assignee:

APPLIED MATERIALS INC (US)

International Classes:

C23C16/34; C07F7/10; C23C16/50; C23C16/56

Domestic Patent References:

WO2011010650A1

2011-01-27

Foreign References:

US20140051264A1	2014-02-20
US4863755A	1989-09-05
US20170114465A1	2017-04-27

Other References:

FRACASSI, F. ET AL.: "Plasma deposition of silicon nitride-like thin films from organosilicon precursors", PLASMAS AND POLYMERS, vol. 1, no. 1, 1996, pages 3 - 16, XP000683559

Attorney, Agent or Firm:

BLANKMAN, Jeffrey I. (US)

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