Title:
SILICON NITRIDE SINTERED BODY, AND MANUFACTURING METHOD OF SILICON NITRIDE SINTERED BODY
Document Type and Number:
WIPO Patent Application WO/2023/157784
Kind Code:
A1
Abstract:
Provided is a silicon nitride sintered body in which the orientation of β-type silicon nitride (β-Si3N4) particles is controlled and the thermal conductivity performance is further improved. The silicon nitride sintered body forms a substrate containing β-type silicon nitride particles, and the Lotgering factor f(hk0), which indicates the orientation degree of the (hk0) plane of the β-type silicon nitride particles on the substrate plane, is a negative value.
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Inventors:
MATSUMOTO OSAMU (JP)
TAKAHASHI MITSUTAKA (JP)
TAKAHASHI MITSUTAKA (JP)
Application Number:
PCT/JP2023/004687
Publication Date:
August 24, 2023
Filing Date:
February 13, 2023
Export Citation:
Assignee:
MARUWA KK (JP)
International Classes:
C04B35/591; C04B35/622
Domestic Patent References:
WO2022024707A1 | 2022-02-03 | |||
WO2020195298A1 | 2020-10-01 | |||
WO2022196693A1 | 2022-09-22 |
Foreign References:
JP2018184333A | 2018-11-22 |
Attorney, Agent or Firm:
HIROE AND ASSOCIATES, PATENT PROFESSIONAL CORPORATION (JP)
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