SILICON OXIDE FOR NEGATIVE ELECTRODE MATERIAL OF NONAQUEOUS ELECTROLTYE SECONDARY CELL, METHOD FOR PRODUCING SAME, LITHIUM ION SECONDARY CELL, AND ELECTROCHEMICAL CAPACITOR

Title:

SILICON OXIDE FOR NEGATIVE ELECTRODE MATERIAL OF NONAQUEOUS ELECTROLTYE SECONDARY CELL, METHOD FOR PRODUCING SAME, LITHIUM ION SECONDARY CELL, AND ELECTROCHEMICAL CAPACITOR

Document Type and Number:

WIPO Patent Application WO/2013/054476

Kind Code:

A1

Abstract:

The present invention is a silicon oxide for the negative electrode material of a nonaqueous electrolyte secondary cell, wherein the silicon oxide for the negative electrode material of a nonaqueous electrolyte secondary cell is a carbon-containing silicon oxide obtained by coprecipitation from SiO gas and a carbon-containing gas and the carbon content of the carbon-containing silicon oxide is between 0.5 and 30%. The present invention thereby provides a silicon oxide with which, when used as the negative electrode material, a nonaqueous electrolyte secondary cell having excellent cycle properties and high cell capacity can be produced, a method for producing the silicon oxide, and a lithium ion secondary cell and electrochemical capacitor that use the silicon oxide.

Inventors:

FUKUOKA HIROFUMI (JP)
UENO SUSUMU (JP)

Application Number:

PCT/JP2012/006015

Publication Date:

April 18, 2013

Filing Date:

September 21, 2012

Export Citation:

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Assignee:

SHINETSU CHEMICAL CO (JP)

International Classes:

H01M4/48

Foreign References:

JP2004063433A	2004-02-26
JP2003317717A	2003-11-07
JP2011192453A	2011-09-29
JP2008084842A	2008-04-10
JP2008098151A	2008-04-24
JP2007053084A	2007-03-01
JP3008228B2	2000-02-14
JP3242751B2	2001-12-25
JP3846661B2	2006-11-15
JP2997741B2	2000-01-11
JP3918311B2	2007-05-23

Other References: