Title:
SILICON PRECURSOR AND METHOD FOR MANUFACTURING SILICON-CONTAINING THIN FILM USING SAME
Document Type and Number:
WIPO Patent Application WO/2020/111405
Kind Code:
A1
Abstract:
The present invention relates to a vapor deposition compound capable of thin film deposition through vapor deposition and, more specifically, to a silicon precursor and a method for manufacturing a silicon-containing thin film using same, wherein the silicon precursor is applicable to atomic layer deposition (ALD) or chemical vapor deposition (CVD), and is particularly capable of high temperature deposition.
Inventors:
AN JAE-SEOK (KR)
PARK JONG-RYUL (KR)
NIM MIN-HYUK (KR)
SEOK JANG-HYEON (KR)
PARK JUNG WOO (KR)
PARK JONG-RYUL (KR)
NIM MIN-HYUK (KR)
SEOK JANG-HYEON (KR)
PARK JUNG WOO (KR)
Application Number:
PCT/KR2019/004960
Publication Date:
June 04, 2020
Filing Date:
April 24, 2019
Export Citation:
Assignee:
HANSOL CHEMICAL CO LTD (KR)
International Classes:
C07F7/10; C23C16/40; C23C16/455; H01L21/02
Foreign References:
| KR20160093093A | 2016-08-05 | |||
| KR20010098415A | 2001-11-08 | |||
| KR20130034001A | 2013-04-04 | |||
| KR20140067786A | 2014-06-05 | |||
| KR20160100260A | 2016-08-23 | |||
| US5593741A | 1997-01-14 | |||
| KR20110017404A | 2011-02-21 |
Other References:
See also references of EP 3680245A4
Attorney, Agent or Firm:
HANYANG PATENT FIRM (KR)
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