Title:
SILICON SINGLE CRYSTAL GROWTH METHOD AND APPARATUS
Document Type and Number:
WIPO Patent Application WO/2019/143175
Kind Code:
A1
Abstract:
An embodiment provides a silicon single crystal growth method comprising the steps of: (a) allowing the shoulder of a single crystal to grow vertically; (b) allowing the shoulder to grow horizontally after the vertical growth; and (c) allowing the shoulder to grow in a downward convex shape after the horizontal growth of the shoulder, wherein the shoulder grows at a preset rate on the basis of the final diameter of the shoulder and the shoulder growth height according to steps (b) and (c).
Inventors:
KANG JONG MIN (KR)
CHOI IL SOO (KR)
CHOI IL SOO (KR)
Application Number:
PCT/KR2019/000753
Publication Date:
July 25, 2019
Filing Date:
January 18, 2019
Export Citation:
Assignee:
SK SILTRON CO LTD (KR)
International Classes:
C30B15/22; C30B15/10; C30B15/36; C30B29/06
Foreign References:
| KR20090078234A | 2009-07-17 | |||
| KR20090014957A | 2009-02-11 | |||
| KR20160084987A | 2016-07-15 | |||
| JPH11322492A | 1999-11-24 | |||
| JP4569103B2 | 2010-10-27 |
Attorney, Agent or Firm:
LEE, Seung Chan (KR)
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