SILICON SINGLE CRYSTAL INGOT AND WAFER FOR SEMICONDUCTOR

Title:

SILICON SINGLE CRYSTAL INGOT AND WAFER FOR SEMICONDUCTOR

Document Type and Number:

WIPO Patent Application WO/2014/189194

Kind Code:

A1

Abstract:

A silicon single crystal ingot and a wafer for a semiconductor in one embodiment include a transition region which dominantly has a crystalline defect having a size of 10 nm to 30 nm among the crystalline defects included in an interstitial dominant defect-free region. The difference between the initial oxygen concentration before performing at least one heat treatment to the ingot and the wafer and the final oxygen concentration after performing at least one heat treatment is 0.5 ppma or less.

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Inventors:

HONG YOUNG HO (KR)
PARK HYUN WOO (KR)

Application Number:

PCT/KR2014/000653

Publication Date:

November 27, 2014

Filing Date:

January 23, 2014

Export Citation:

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Assignee:

LG SILTRON INC (KR)

International Classes:

C30B15/00; C30B13/00; C30B29/06

Foreign References:

KR100582239B1	2006-05-24
JP2005064405A	2005-03-10
JP2004250263A	2004-09-09
KR20050019845A	2005-03-03
KR20070013642A	2007-01-31
JP2008207991A	2008-09-11

Attorney, Agent or Firm:

KIM, Yong In et al. (KR)
김용인 (KR)

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