Title:
SILICON SINGLE CRYSTAL MATERIAL AND ITS PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2004/003265
Kind Code:
A1
Abstract:
A method for producing a thick sheet or block of a silicon single crystal material having a desired thickness by the CZ method. The resistivity of the material is within ± 10% of the determined resistivity of a sample after the CZ growth and is above 10 &ohm ·cm. The thermal donors in the material are made to disappear and cracking does not occur. The method for producing a silicon single crystal having a resistivity of above 10 &ohm ·cm and containing oxygen at a concentration of above 1×1017 atoms/cm3 comprises a heat-treatment step of maintaining the material at a temperature from 550°C to 800°C for about 15 minutes, a rapid-cooling step of cooling the material at 2°C/sec during at least the period in which the temperature decreases from 550°C to 400°C within the cooling range from the heat-treatment end temperature to 350°C, and a cooling step of cooling the material from the rapid-cooling end temperature to the room temperature at below 1°C/section.
Inventors:
KIZAKI SHINGO (JP)
YOSHINO MASAKI (JP)
YOSHINO MASAKI (JP)
Application Number:
PCT/JP2002/006654
Publication Date:
January 08, 2004
Filing Date:
July 01, 2002
Export Citation:
Assignee:
SUMITOMO TITANIUM CORP (JP)
KIZAKI SHINGO (JP)
YOSHINO MASAKI (JP)
KIZAKI SHINGO (JP)
YOSHINO MASAKI (JP)
International Classes:
C30B15/00; C30B15/14; (IPC1-7): C30B29/06
Foreign References:
| EP0391709A2 | 1990-10-10 | |||
| JPS59190300A | 1984-10-29 | |||
| US5449883A | 1995-09-12 | |||
| JPH09283495A | 1997-10-31 | |||
| US6086670A | 2000-07-11 | |||
| JPH05208892A | 1993-08-20 |
Attorney, Agent or Firm:
Ikejyo, Shigenobu (3-3 Fushimimachi 3-chome, Chuou-k, Osaka-shi Osaka, JP)
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