Title:
SILICON SINGLE-CRYSTAL WAFER AND PROCESS FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO/2008/029579
Kind Code:
A1
Abstract:
A silicon single-crystal wafer grown according to the CZ method, doped with nitrogen so
as to treat the whole surface into N-region, which silicon single-crystal wafer
exhibits a nondefective rate of 90% or higher in TZDB performance and TDDB performance
and exhibits a BMD density maximum value/minimum value ratio of 50 or below within
the wafer plane after gettering heat treatment or device heat treatment. Further,
there is provided a process for producing a silicon single-crystal wafer through
growing of silicon single-crystal according to the CZ method wherein crystal
upward pull is performed under such conditions that the crystal whole surface
becomes N-region while doping the same with nitrogen of 5Œ1011 to
3Œ1013 atoms/cm3 concentrationand oxygen of 8 to
less than 13 ppma (JEIDA) concentration. Accordingly, the provided silicon single-crystal
wafer and process for producing the silicon single-crystal wafer would realize
excellence in the TZDB performance and TDDB performance on a wafer surface-layer
region as a device fabrication region and lowering of the dispersion of BMD density
in the wafer plane.
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Inventors:
HOSHI, Ryoji (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura , Nishishirakawa-gu, Fukushima 61, 9618061, JP)
星 亮二 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地 信越半導体株式会社 半導体白河研究所内 Fukushima, 9618061, JP)
星 亮二 (〒61 福島県西白河郡西郷村大字小田倉字大平１５０番地 信越半導体株式会社 半導体白河研究所内 Fukushima, 9618061, JP)
Application Number:
JP2007/065230
Publication Date:
March 13, 2008
Filing Date:
August 03, 2007
Export Citation:
Assignee:
Shin-Etsu Handotai Co., Ltd. (6-2 Ohtemachi 2-chome, Chiyoda-ku Tokyo, 04, 1000004, JP)
信越半導体株式会社 (〒04 東京都千代田区大手町二丁目６番２号 Tokyo, 1000004, JP)
HOSHI, Ryoji (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura , Nishishirakawa-gu, Fukushima 61, 9618061, JP)
信越半導体株式会社 (〒04 東京都千代田区大手町二丁目６番２号 Tokyo, 1000004, JP)
HOSHI, Ryoji (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura , Nishishirakawa-gu, Fukushima 61, 9618061, JP)
International Classes:
H01L21/322; C30B29/06
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (1st Shitaya Bldg. 8F, 6-11Ueno 7-chome, Taito-ku, Tokyo 05, 1100005, JP)
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