Title:
SILICON SINGLE-CRYSTAL WAFER AND PROCESS FOR PRODUCING THE SAME
Document Type and Number:
WIPO Patent Application WO/2008/029579
Kind Code:
A1
Abstract:
A silicon single-crystal wafer grown according to the CZ method, doped with nitrogen so
as to treat the whole surface into N-region, which silicon single-crystal wafer
exhibits a nondefective rate of 90% or higher in TZDB performance and TDDB performance
and exhibits a BMD density maximum value/minimum value ratio of 50 or below within
the wafer plane after gettering heat treatment or device heat treatment. Further,
there is provided a process for producing a silicon single-crystal wafer through
growing of silicon single-crystal according to the CZ method wherein crystal
upward pull is performed under such conditions that the crystal whole surface
becomes N-region while doping the same with nitrogen of 5Œ1011 to
3Œ1013 atoms/cm3 concentrationand oxygen of 8 to
less than 13 ppma (JEIDA) concentration. Accordingly, the provided silicon single-crystal
wafer and process for producing the silicon single-crystal wafer would realize
excellence in the TZDB performance and TDDB performance on a wafer surface-layer
region as a device fabrication region and lowering of the dispersion of BMD density
in the wafer plane.
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Inventors:
HOSHI RYOJI (JP)
FUSEGAWA IZUMI (JP)
FUSEGAWA IZUMI (JP)
Application Number:
PCT/JP2007/065230
Publication Date:
March 13, 2008
Filing Date:
August 03, 2007
Export Citation:
Assignee:
SHINETSU HANDOTAI KK (JP)
HOSHI RYOJI (JP)
FUSEGAWA IZUMI (JP)
HOSHI RYOJI (JP)
FUSEGAWA IZUMI (JP)
International Classes:
H01L21/322; C30B29/06
Foreign References:
| JP2000053497A | 2000-02-22 | |||
| JP2002043241A | 2002-02-08 | |||
| JP2002016071A | 2002-01-18 | |||
| JPH11322490A | 1999-11-24 | |||
| JP2006005088A | 2006-01-05 |
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (6-11Ueno 7-chome, Taito-ku, Tokyo 05, JP)
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