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Title:
SILICON STRAIN GAUGE HAVING HIGH SENSITIVITY AND PRESSURE TRANSDUCER COMPRISING SAME
Document Type and Number:
WIPO Patent Application WO/2020/209397
Kind Code:
A1
Abstract:
A silicon strain gauge having high sensitivity and a pressure transducer comprising same according to an embodiment of the disclosed invention comprise: a substrate including a pad area and a gauge area; a gauge structure which is positioned in the gauge area and includes at least one arch-shaped pattern formed in a tangential direction centering an imaginary point positioned outside the substrate; and two pad structures which are connected to both ends of the gauge structure and are positioned in the pad area.

Inventors:
MIN NAMKI (KR)
Application Number:
PCT/KR2019/004168
Publication Date:
October 15, 2020
Filing Date:
April 08, 2019
Export Citation:
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Assignee:
AUTONICS CORP (KR)
International Classes:
G01L9/00; G01L1/22
Domestic Patent References:
WO2005054777A12005-06-16
Foreign References:
US20150338253A12015-11-26
US20070151348A12007-07-05
US20140137654A12014-05-22
KR100993208B12010-11-09
KR20190104705A2019-09-11
Attorney, Agent or Firm:
ROYAL PATENT & LAW OFFICE (KR)
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