Title:
SILICON SUBSTRATE ETCHING METHOD USING PLASMA GAS
Document Type and Number:
WIPO Patent Application WO/2016/085155
Kind Code:
A1
Abstract:
A silicon substrate etching method of the present invention enabling a desired part of a silicon substrate to be etched may comprise the steps of: forming an etch mask on a silicon substrate; preparing a first gas comprising halogen base gas, carbon fluoride gas and oxygen; and etching the substrate by plasma-treating the first gas on the substrate.
Inventors:
KIM CHANG-KOO (KR)
CHO SUNG WOON (KR)
KIM JUN HYUN (KR)
CHO SUNG WOON (KR)
KIM JUN HYUN (KR)
Application Number:
PCT/KR2015/012037
Publication Date:
June 02, 2016
Filing Date:
November 10, 2015
Export Citation:
Assignee:
AJOU UNIV IND ACAD COOP FOUND (KR)
International Classes:
H01L21/3065
Foreign References:
| JP2003506866A | 2003-02-18 | |||
| KR20080044340A | 2008-05-20 | |||
| US20070218696A1 | 2007-09-20 | |||
| JP2003523625A | 2003-08-05 | |||
| KR20100024356A | 2010-03-05 |
Attorney, Agent or Firm:
NAM, Gunpil et al. (KR)
남건필 (KR)
남건필 (KR)
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