Title:
SILICON SUBSTRATE TO BE USED FOR PRODUCTION OF EPITAXIAL SILICON THIN FILM, AND METHOD FOR PRODUCING SAME
Document Type and Number:
WIPO Patent Application WO/2019/049876
Kind Code:
A1
Abstract:
The present invention addresses: the problem of providing a high-quality epitaxial silicon thin film having few defects in the production of an epitaxial silicon thin film using double layer porous silicon (DLPS); and the problem of providing a highly efficient single crystal silicon solar cell or the like at low cost. The problems are solved by a silicon substrate having a double layer porous silicon layer (DLPS) that is composed of a low porosity layer (LPL) and a high porosity layer (HPL), which is configured such that the low porosity layer (LPL) has a surface roughness (Rms) of 0.3 nm or less, said surface roughness being represented by formula (1).
(In formula (1), l represents the standard length; and Z(x) represents the height difference from the reference line at the position x.)
Inventors:
IHARA MANABU (JP)
HASEGAWA KEI (JP)
TAKAZAWA CHIAKI (JP)
MATSUURA AKIRA (JP)
HASEGAWA KEI (JP)
TAKAZAWA CHIAKI (JP)
MATSUURA AKIRA (JP)
Application Number:
PCT/JP2018/032815
Publication Date:
March 14, 2019
Filing Date:
September 05, 2018
Export Citation:
Assignee:
TOKYO INST TECH (JP)
International Classes:
H01L21/20; C23C14/00; C23C14/02; C23C14/14; C30B25/02; C30B29/06; H01L21/203; H01L21/316; H01L31/0392; H01L31/068; H01L31/18
Foreign References:
| JP2011529018A | 2011-12-01 | |||
| JP2000150839A | 2000-05-30 |
Other References:
LUKIANOV ET AL.: "Formation of the seed layers for layer- transfer process silicon solar cells by zone-heating recrystallization of porous silicon structures", APPLIED PHYSICS LETTERS, vol. 108, 26 May 2016 (2016-05-26), pages 213904-1 - 213904-4, XP012208034, DOI: doi:10.1063/1.4951671
NODA, YU ET AL.: "Development of method for manufacturing single crystalline silicon thin film for solar battery", LECTURE ABSTRACTS OF THE 37TH FALL CONFERENCE RESEARCH PRESENTATION OF THE SOCIETY OF CHEMICAL ENGINEERS
NODA, YU ET AL.: "Development of method for manufacturing single crystalline silicon thin film for solar battery", LECTURE ABSTRACTS OF THE 37TH FALL CONFERENCE RESEARCH PRESENTATION OF THE SOCIETY OF CHEMICAL ENGINEERS
Attorney, Agent or Firm:
TAKAHASHI INTERNATIONAL PATENT OFFICE (JP)
Download PDF:
Previous Patent: POSITIVE ELECTRODE ACTIVE MATERIAL FOR ALKALINE STORAGE BATTERY
Next Patent: ANTENNA DEVICE
Next Patent: ANTENNA DEVICE