Title:
SILICON THROUGH-ELECTRODE VOID-FREE FILLING METHOD AND COPPER PLATING SOLUTION USED IN FILLING METHOD
Document Type and Number:
WIPO Patent Application WO/2018/074883
Kind Code:
A1
Abstract:
An embodiment of the present invention provides a through-electrode filling method comprising: a step of immersing a through-electrode including a via in a copper plating solution having a leveler and a copper electrolyte; a first current applying step of applying a first current to coat an upper side surface of a via of the through-electrode in the leveler; a second current applying step of applying a second current, the magnitude of which is lower than that of the first current, to form a plating film of the copper electrolyte on the bottom of the via; and a third current applying step of applying a third current, the magnitude of which is higher than that of the first current, to fill with the copper electrolyte in a part from a surface of the plating film of the copper electrolyte to an opening of the via.
Inventors:
LEE MIN HYUNG (KR)
LEE WOON YOUNG (KR)
JIN SANG HOON (KR)
LEE WOON YOUNG (KR)
JIN SANG HOON (KR)
Application Number:
PCT/KR2017/011656
Publication Date:
April 26, 2018
Filing Date:
October 20, 2017
Export Citation:
Assignee:
KOREA INST IND TECH (KR)
International Classes:
C25D7/12; C25D3/38; C25D21/12; H01L21/768
Foreign References:
| KR20120095225A | 2012-08-28 | |||
| KR20070048211A | 2007-05-08 | |||
| KR101657675B1 | 2016-09-22 | |||
| JP2012122097A | 2012-06-28 | |||
| JP5518925B2 | 2014-06-11 |
Attorney, Agent or Firm:
HAN, Sang Soo (KR)
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