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Title:
SILICON WAFER DEFECT INSPECTION DEVICE
Document Type and Number:
WIPO Patent Application WO/2010/058680
Kind Code:
A1
Abstract:
Provided is a silicon wafer defect inspection device capable of appropriately and clearly detecting a defect even in a polycrystalline silicon wafer. The silicon wafer defect inspection device is provided with an infrared laser light source (1) which applies infrared laser light to an object being inspected (7), a hollow light-receiving unit (2) which comprises an opening (4) for receiving the infrared laser light transmitted through the object being inspected (7) and diffuses the infrared laser light thereinside, and an infrared light detection sensor (3) which detects the amount of the infrared laser light transmitted through the object being inspected (7) with a detection portion thereof exposed to a space portion (2b) of the light-receiving unit (2), wherein the infrared light detection sensor (3) detects the amount of the infrared laser light which is transmitted through the object being inspected (7), enters the light-receiving unit (2) through the opening (4), and is diffused inside the light-receiving unit (2), whereby when the result of the detection is converted into an image, a light-dark pattern of a crystal grain boundary (7a) of a polycrystalline silicon wafer is markedly reduced, and a defect can be clearly detected.

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Inventors:
SAITO YASUSHI (JP)
Application Number:
PCT/JP2009/068338
Publication Date:
May 27, 2010
Filing Date:
October 26, 2009
Export Citation:
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Assignee:
TAKANO CO LTD (JP)
SAITO YASUSHI (JP)
International Classes:
G01N21/956
Foreign References:
JP2002506526A2002-02-26
JP2008198966A2008-08-28
JP2005351684A2005-12-22
JPH01318945A1989-12-25
JP2007218638A2007-08-30
JP2006184177A2006-07-13
JP2004301705A2004-10-28
JP2003262594A2003-09-19
Attorney, Agent or Firm:
NISHIMORI MASAHIRO (JP)
Masahiro Nishimori (JP)
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