Title:
SILICON WAFER MANUFACTURING METHOD
Document Type and Number:
WIPO Patent Application WO/2010/050120
Kind Code:
A1
Abstract:
Provided is a silicon wafer manufacturing method having a step of performing RTA heat treatment to a silicon wafer in an atmosphere gas. The RTA heat treatment is performed by using, as the atmosphere gas, a nitrogen gas having water mixed at a concentration of 5 ppm or more but not more than 250 ppm. Thus, the method by which the temperature or time of the RTA heat treatment to be performed to the silicon wafer is reduced, generation of a slip of the silicon wafer is suppressed, a hole is formed inside the silicon wafer without using NH3, and the high-quality silicon wafer is manufactured.
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Inventors:
QU, Wei Feig (Shin-Etsu Handotai Co. Ltd., 13-1, Isobe 2-chome, Annaka-sh, Gunma 96, 〒3790196, JP)
曲偉峰 (〒96 群馬県安中市磯部２丁目１３番１号信越半導体株式会社 半導体磯部研究所内 Gunma, 〒3790196, JP)
TAKAHASHI, Toru (Shin-Etsu Handotai Co. Ltd., 13-1, Isobe 2-chome, Annaka-sh, Gunma 96, 〒3790196, JP)
曲偉峰 (〒96 群馬県安中市磯部２丁目１３番１号信越半導体株式会社 半導体磯部研究所内 Gunma, 〒3790196, JP)
TAKAHASHI, Toru (Shin-Etsu Handotai Co. Ltd., 13-1, Isobe 2-chome, Annaka-sh, Gunma 96, 〒3790196, JP)
Application Number:
JP2009/004955
Publication Date:
May 06, 2010
Filing Date:
September 29, 2009
Export Citation:
Assignee:
Shin-Etsu Handotai Co.,Ltd. (6-2 Ohtemachi 2-chome, Chiyoda-ku Tokyo, 04, 〒1000004, JP)
信越半導体株式会社 (〒04 東京都千代田区大手町二丁目６番２号 Tokyo, 〒1000004, JP)
QU, Wei Feig (Shin-Etsu Handotai Co. Ltd., 13-1, Isobe 2-chome, Annaka-sh, Gunma 96, 〒3790196, JP)
曲偉峰 (〒96 群馬県安中市磯部２丁目１３番１号信越半導体株式会社 半導体磯部研究所内 Gunma, 〒3790196, JP)
信越半導体株式会社 (〒04 東京都千代田区大手町二丁目６番２号 Tokyo, 〒1000004, JP)
QU, Wei Feig (Shin-Etsu Handotai Co. Ltd., 13-1, Isobe 2-chome, Annaka-sh, Gunma 96, 〒3790196, JP)
曲偉峰 (〒96 群馬県安中市磯部２丁目１３番１号信越半導体株式会社 半導体磯部研究所内 Gunma, 〒3790196, JP)
International Classes:
H01L21/322
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (1st Shitaya Bldg. 8F, 6-11 Ueno 7-chome, Taito-k, Tokyo 05, 〒1100005, JP)
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