Title:
SILICON WAFER AND METHOD FOR MANUFACTURING SAME
Document Type and Number:
WIPO Patent Application WO/2015/186288
Kind Code:
A1
Abstract:
A manufacturing method of the present invention includes: a step for slicing a silicon single crystal containing boron as an acceptor, and obtaining a silicon wafer to be heat treated; and a step for obtaining boron concentration with respect to the silicon wafer to be heat treated. On the basis of a step for obtaining oxygen donor concentration with respect to the silicon wafer to be heat treated, and on the boron concentration obtained by means of the step for obtaining the boron concentration, and the oxygen donor concentration obtained by means of the step for obtaining the oxygen donor concentration, whether the silicon wafer is to be subjected to heat treatment at a temperature of 300°C or higher is determined. Consequently, the wafer with reduced unevenly distributed LPD on the wafer is obtained.
Inventors:
KUDO SATOSHI (JP)
NAKAMURA KOUZOU (JP)
MURANAKA TOSHIYUKI (JP)
MATSUDA SHUHEI (JP)
KIM TEGI (JP)
HIRAKI KEIICHIRO (JP)
NAKAMURA KOUZOU (JP)
MURANAKA TOSHIYUKI (JP)
MATSUDA SHUHEI (JP)
KIM TEGI (JP)
HIRAKI KEIICHIRO (JP)
Application Number:
PCT/JP2015/002025
Publication Date:
December 10, 2015
Filing Date:
April 10, 2015
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
C30B29/06; H01L21/324; C30B33/02; H01L21/26
Foreign References:
| JP2008545605A | 2008-12-18 | |||
| JP2002104897A | 2002-04-10 | |||
| JP2013004825A | 2013-01-07 |
Attorney, Agent or Firm:
ASCEND IP LAW FIRM (JP)
アセンド patent business corporation (JP)
アセンド patent business corporation (JP)
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