Title:
SILICON WAFER POLISHING METHOD AND SILICON WAFER PRODUCTION METHOD
Document Type and Number:
WIPO Patent Application WO/2022/130696
Kind Code:
A1
Abstract:
The silicon wafer polishing method according to the present invention comprises performing, as a final polishing step, a prior stage polishing step and a subsequent finishing polishing step. In the final polishing step, the finishing polishing step includes a finishing slurry polishing step using as the second polishing liquid a polishing liquid having an abrasive grain density of 1 × 1013/cm3 or higher, and a pre-polishing step performed prior to the finishing slurry polishing step and using as the second polishing liquid a polishing liquid having an abrasive grain density of 1 × 1010/cm3 or lower. The silicon wafer production method comprises forming a notch portion in the outer peripheral portion of a single crystal silicon ingot grown by the Czochralski method, thereafter, performing slicing to obtain a silicon wafer, and then subjecting the obtained silicon wafer to the polishing processing by the aforementioned silicon wafer polishing method.
Inventors:
MURAKAMI MASAHIRO (JP)
TERAKAWA RYOYA (JP)
TERAKAWA RYOYA (JP)
Application Number:
PCT/JP2021/031247
Publication Date:
June 23, 2022
Filing Date:
August 25, 2021
Export Citation:
Assignee:
SUMCO CORP (JP)
International Classes:
B24B37/00; B24B37/12; B24B53/017; H01L21/304
Domestic Patent References:
| WO2012002525A1 | 2012-01-05 |
Foreign References:
| JP2017183478A | 2017-10-05 | |||
| JP2015159259A | 2015-09-03 | |||
| JP2003311593A | 2003-11-05 |
Attorney, Agent or Firm:
SUGIMURA Kenji (JP)
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