Title:
SILICON WAFER PROCESSING SOLUTION AND SILICON WAFER PROCESSING METHOD
Document Type and Number:
WIPO Patent Application WO/2012/026437
Kind Code:
A1
Abstract:
A silicon wafer processing solution for use in a silicon wafer processing method contains a friction modifier comprising a nitrogenated compound, wherein the nitrogenated compound can exhibit a pH value of 2 to 8 inclusive when mixed with water at a mixing ratio (nitrogenated compound/water) of 1/99 by mass. The nitrogenated compound is preferably a heterocyclic compound. The silicon wafer processing solution can prevent the abrasion of abrasive grains fixed onto a wire and the generation of hydrogen.
Inventors:
KITAMURA Tomohiko (24-4, Anesakikaigan Ichihara-sh, Chiba 07, 〒2990107, JP)
Application Number:
JP2011/068899
Publication Date:
March 01, 2012
Filing Date:
August 23, 2011
Export Citation:
Assignee:
IDEMITSU KOSAN CO.,LTD. (1-1 Marunouchi 3-chome, Chiyoda-ku Tokyo, 21, 〒1008321, JP)
出光興産株式会社 (〒21 東京都千代田区丸の内三丁目１番１号 Tokyo, 〒1008321, JP)
出光興産株式会社 (〒21 東京都千代田区丸の内三丁目１番１号 Tokyo, 〒1008321, JP)
International Classes:
H01L21/304; B24B27/06; B24B37/00; B28D5/00
Attorney, Agent or Firm:
KINOSHITA & ASSOCIATES (3rd floor, Ogikubo TM building 26-13, Ogikubo 5-chome, Suginami-k, Tokyo 51, 〒1670051, JP)
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