Title:
SILVER DIFFUSION BARRIER MATERIAL, SILVER DIFFUSION BARRIER, AND SEMICONDUCTOR DEVICE USING SAME
Document Type and Number:
WIPO Patent Application WO/2015/174482
Kind Code:
A1
Abstract:
By using silicon oxynitride with an oxygen content of 4.2-37.5 at% as a material for a barrier layer, the same adhesiveness as that of silicon oxide and the same silver diffusion prevention characteristic as that of silicon oxide can be achieved. In particular, in a semiconductor device formed by vertically laminating a plurality of silicon chips by through-silicon vias, silver is prevented from diffusing into silicon and better adhesiveness to silicon is achieved when a silver/polypyrrole complex is used as a conductive filling material used for the formation of a barrier layer provided in the inner surface of the via.
Inventors:
KAWAKITA JIN (JP)
HORVATH BARBARA (JP)
CHIKYO TOYOHIRO (JP)
HORVATH BARBARA (JP)
CHIKYO TOYOHIRO (JP)
Application Number:
PCT/JP2015/063860
Publication Date:
November 19, 2015
Filing Date:
May 14, 2015
Export Citation:
Assignee:
NAT INST FOR MATERIALS SCIENCE (JP)
International Classes:
C08K3/08; H01L21/3205; C08L65/00; H01L21/768; H01L23/522; H01L23/532; H01L25/065; H01L25/07; H01L25/18
Foreign References:
| JP2007109736A | 2007-04-26 | |||
| JP2012119685A | 2012-06-21 | |||
| JP2005166502A | 2005-06-23 |
Other References:
See also references of EP 3144964A4
Attorney, Agent or Firm:
NISHIZAWA TOSHIO (JP)
Toshio Nishizawa (JP)
Toshio Nishizawa (JP)
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