Title:
SIMULTANEOUS SENSING OF MULTIPLE WORDLINES AND DETECTION OF NAND FAILURES
Document Type and Number:
WIPO Patent Application WO/2013/016401
Kind Code:
A4
Abstract:
Techniques for a post-write read are presented. In an exemplary embodiment, a combined simultaneous sensing of multiple word lines is used in order to identify a problem in one or more of these word lines. That is, sensing voltages are concurrently applied to the control gates of more than one memory cell whose resultant conductance is measured on the same bit line. The combined sensing result is use for measuring certain statistics of the cell voltage distribution (CVD) of multiple word lines and comparing it to the expected value. In case the measured statistics are different than expected, this may indicate that one or more of the sensed word lines may exhibit a failure and more thorough examination of the group of word lines can be performed.
Inventors:
SHARON ERAN (IL)
LI YAN (US)
LEE DANA (US)
ALROD IDAN (IL)
LI YAN (US)
LEE DANA (US)
ALROD IDAN (IL)
Application Number:
PCT/US2012/048094
Publication Date:
March 21, 2013
Filing Date:
July 25, 2012
Export Citation:
Assignee:
SANDISK TECHNOLOGIES INC (US)
SHARON ERAN (IL)
LI YAN (US)
LEE DANA (US)
ALROD IDAN (IL)
SHARON ERAN (IL)
LI YAN (US)
LEE DANA (US)
ALROD IDAN (IL)
International Classes:
G11C16/34; G11C11/56
Attorney, Agent or Firm:
CLEVELAND, Michael G. et al. (505 Montgomery Street Suite 80, San Francisco California, US)
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