Title:
SINGLE-CRYSTAL INGOT GROWTH APPARATUS
Document Type and Number:
WIPO Patent Application WO/2014/115948
Kind Code:
A1
Abstract:
Disclosed is a single-crystal ingot growth apparatus including a chamber, a crucible placed within the chamber and configured to accommodate a melt that is a raw material for single-crystal growth, a top insulator located at an upper end of the crucible, the top insulator having a central first opening and a second opening provided between an inner circumferential surface and an outer circumferential surface of the top insulator, a camera configured to capture an image of the melt and a single-crystal ingot that is being grown, through the first opening and the second opening and to output image data, and a detector configured to calculate a diameter of the single-crystal ingot that is being grown, based on the image data.
Inventors:
AHN SEONG CHUL (KR)
Application Number:
PCT/KR2013/008660
Publication Date:
July 31, 2014
Filing Date:
September 27, 2013
Export Citation:
Assignee:
LG SILTRON INC (KR)
International Classes:
C30B17/00; C30B15/00; C30B29/20; H01L33/00
Foreign References:
| KR20100067158A | 2010-06-21 | |||
| KR20120130125A | 2012-11-29 | |||
| KR20100087929A | 2010-08-06 | |||
| JP2011246341A | 2011-12-08 | |||
| KR100947836B1 | 2010-03-18 |
Attorney, Agent or Firm:
KIM, Yong In et al. (7th Floor Hyundae Building,175-9 Jamsil-dong Songpa-ku, Seoul 138-861, KR)
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