SINGLE CRYSTAL MANUFACTURING APPARATUS AND METHOD

Title:

SINGLE CRYSTAL MANUFACTURING APPARATUS AND METHOD

Document Type and Number:

WIPO Patent Application WO/2008/038450

Kind Code:

A1

Abstract:

A Czochralski single crystal manufacturing apparatus using heater stages exhibits an improved controllability of the crystal diameter. To control the crystal diameter, the pull-up speed is controlled. The power supplied to the heater stages (16, 18) is regulated to make the pull-up speed approach a predetermined set value and make the heater temperature to a predetermined temperature target value. The power ratio of the heaters (16, 18) is so controlled as to agree with a predetermined power ratio set value. The power ratio set value varies with the crystal pull-up length. The heater temperature varies with the variation, and this causes the disturbance of the diameter control. To compensate this disturbance, the variation of the heater temperature varying with the power ratio set value is used when the temperature set value on the basis of which the temperature target value is determined is set. Therefore, the temperature set value varies to a value suitable for the present power ratio set value with the power ratio set value.

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Inventors:

IIDA, Tetsuhiro (25-1 Shinomiya 3-chome, Hiratsuka-shi, Kanagawa 14, 2540014, JP)
飯田哲広 (〒14 神奈川県平塚市四之宮三丁目２５番地１号ＳＵＭＣＯＴＥＣＨＸＩＶ株式会社内 Tokyo, 2540014, JP)

Application Number:

JP2007/064363

Publication Date:

April 03, 2008

Filing Date:

July 20, 2007

Export Citation:

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Assignee:

SUMCO TECHXIV CORPORATION (25-1, Shinomiya 3-chome Hiratsuka-shi, Kanagawa 14, 2540014, JP)
ＳＵＭＣＯＴＥＣＨＸＩＶ株式会社 (〒14 神奈川県平塚市四之宮三丁目２５番地１号 Kanagawa, 2540014, JP)
IIDA, Tetsuhiro (25-1 Shinomiya 3-chome, Hiratsuka-shi, Kanagawa 14, 2540014, JP)

International Classes:

C30B15/20

Attorney, Agent or Firm:

Willfort International (Kanda Center Bldg, 5F3-2, Kajicho 2-chome, Chiyoda-ku, Tokyo 44, 1010044, JP)

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