Title:
SINGLE CRYSTAL MANUFACTURING APPARATUS
Document Type and Number:
WIPO Patent Application WO/2011/083529
Kind Code:
A1
Abstract:
Disclosed is a single crystal manufacturing apparatus, which manufactures a single crystal ingot by the Czochralski method, and which is provided with a crucible that contains a raw material melt, a heater having a cylindrical heating section that surrounds the crucible, a main chamber that houses the heater, heater electrodes, which support the heater and supply a current, and a heat insulating plate, which is disposed below the cylindrical heating section for the heater. The heat insulating plate is fixed and supported to the heater electrodes with insulating fixing members therebetween, and insulating supporting member is disposed at a position that corresponds to the lower end of the cylindrical heating section, said position being on the upper surface of the heat insulating plate. Thus, deformation of the heater is suppressed, and deterioration of thermal efficiency is eliminated.
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Inventors:
SHIMADA, Toshiro (Shin-Etsu Handotai Co. Ltd., 150, Aza Ohira, Oaza Odakura, Nishigo-mura, Nishishirakawa-gu, Fukushima 61, 〒9618061, JP)
Application Number:
JP2010/007044
Publication Date:
July 14, 2011
Filing Date:
December 03, 2010
Export Citation:
Assignee:
Shin-Etsu Handotai Co.,Ltd. (6-2 Ohtemachi 2-chome, Chiyoda-ku Tokyo, 04, 〒1000004, JP)
信越半導体株式会社 (〒04 東京都千代田区大手町二丁目6番2号 Tokyo, 〒1000004, JP)
信越半導体株式会社 (〒04 東京都千代田区大手町二丁目6番2号 Tokyo, 〒1000004, JP)
International Classes:
C30B15/14; C30B29/06
Attorney, Agent or Firm:
YOSHIMIYA, Mikio (1st Shitaya Bldg. 8F, 6-11 Ueno 7-chome, Taito-k, Tokyo 05, 〒1100005, JP)
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